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A review on Raman spectroscopy of the oxide magnetic semiconductor Zn1−xMnxO

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In this report, Raman spectra of the Zn1−xMnxO samples annealed at various temperatures in different ambients, such as in air, in argon and in oxygen were studied. The results indicate that the Raman spectra of the samples are affected significantly by the annealing temperature and by the ambient. The most intensive peak in the Raman spectra at approximately 570 cm−1 has two components, one at around 570 cm−1 (A1(LO)) and the other at 580 cm−1 (E1(LO)). In contrast to previous results, with increasing annealing temperature, the intensity of 570 cm−1 peak still remains anomalously high. However, the intensity of the 570 cm−1 peak is low for the samples annealed at low temperature. The effects of the solubility of Mn dopant, grain size, surface phonons and free carrier concentration on Raman spectra of the samples are also investigated.
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A review on Raman spectroscopy of the oxide magnetic semiconductor Zn1−xMnxO

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