Chất lượngDesign and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications nước biển ven bờ từ dữ liệu các trạm quan trắc môi trường phía nam Việt Nam (2013- 2017)

In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software.
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Chất lượngDesign and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications nước biển ven bờ từ dữ liệu các trạm quan trắc môi trường phía nam Việt Nam (2013- 2017) Journal of Science: Advanced Materials and Devices 4 (2019) 180e187 Contents lists available at ScienceDirect Journal of Science: Advanced Materials and Devices journal homepage: www.elsevier.com/locate/jsamdOriginal ArticleDesign and analysis of 10 nm T-gate enhancement-mode MOS-HEMTfor high power microwave applicationsTouati Zine-eddine a, *, Hamaizia Zahra a, Messai Zitouni b, ca Laboratory of Semiconducting and Metallic Materials, University of Mohamed Khider Biskra, Algeriab Electronics Department, Faculty of Sciences and Technology, University of BBA, Algeriac Laboratory of Optoelectronics and Components, UFAS 19000, Algeriaa r t i c l e i n f o a b s t r a c tArticle history: In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electronReceived 17 December 2018 mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC andReceived in revised form RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software. The30 December 2018 device features are heavily doped (nþþ GaN) source/drain regions for reducing the contact resistancesAccepted 2 January 2019Available online 7 January 2019 and gate capacitances, which uplift the microwave characteristics of the MOS-HEMT. The enhancement- mode GaN MOS-HEMTs showed an outstanding performance with a threshold voltage of 1.07 V, maximum extrinsic transconductance of 1438 mS/mm, saturation current at VGS ¼ 2 V of 1.5 A/mm,Keywords:Enhancement-mode maximum current of 2.55 A/mm, unity-gain cut-off frequency of 524 GHz, and with a record maximumMOS-HEMT oscillation frequency of 758 GHz. The power performance characterized at 10 GHz to give an outputHigh-k power of 29.6 dBm, a power gain of 24.2 dB, and a power-added efficiency of 43.1%. Undoubtedly, theseTiO2 results place the device at the forefront for high power and millimeter wave applications.Regrown source/drain © 2019 The Authors. Publishing services by Elsevier B.V. on behalf of Vietnam National University, Hanoi.TCAD This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).1. Introduction dielectric to overcome the aforementioned limitation. These solu- tions, however, were performed at the expense of a decrease in the GaN-based high electron mobility transistors (HEMTs) are the device transconductance (gm) and large shift in the thresholdmost preferred devices for high-power and high frequency applica- voltage (Vth). The dielectric with high permittivity (high k) cantions, due to their suitable material properties such as high break- effectively alleviate these problems.down voltage, high saturation velocity, low effective mass, high All these devices suffered from the high contact resistance ofthermal conductivity and high two-dimensional electron gas (2DEG) >0.3 U mm and the high on-resistance of >1 U mm due to thedensity of the order of 1013 cm2 at the hetero interface [1e3]. alloyed ohmic contacts and the large source-drain distance.However, Schottky gate transistors usually exhibit a high gate Recently, the heavily doped n þ GaN source/drain ohmic contactsleakage current [4], and a drain current collapse when operating at allowed a significant reduction of the contact resistivity in thehigh frequencies. These are the major factors that limit the perfor- proposed device [16,17]. The T-gate structure reduces the gate ac-mance and reliability of HEMT in radio frequency (RF) power ...