Conversion of bipolar resistive switching and threshold switching by controlling conductivity behavior and porous volumes of UiO-66 thin films
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In the age of big data, a memory with cross-bar array architecture is urgently required to facilitate highdensity data storage. To eliminate the sneak path current of integrated circuits, threshold switchingbased selectors have been utilized simultaneously with resistive switching memories.
Nội dung trích xuất từ tài liệu:
Conversion of bipolar resistive switching and threshold switching by controlling conductivity behavior and porous volumes of UiO-66 thin films
Nội dung trích xuất từ tài liệu:
Conversion of bipolar resistive switching and threshold switching by controlling conductivity behavior and porous volumes of UiO-66 thin films
Tìm kiếm theo từ khóa liên quan:
Advanced materials and devices Resistive switching Threshold switching Uric acid Porous cagesTài liệu liên quan:
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