Thông tin tài liệu:
This study presents a design procedure to obtain high-efficiency for microwave power amplifier. The designed amplifier uses a GaN high electron mobility transistor as an active device. Matching networks including input and output networks are realized using Megtron6 substrate microstrip lines. The designed amplifier operates at 2.1 GHz band.
Nội dung trích xuất từ tài liệu:
Design of a high-efficiency GaN high-electron mobility transistor microwave power amplifier