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Điện tử_ Chapter 12 Chapter 12 Field-Effect TransistorsELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc. Chapter12 FieldEffect Transistors1. Understand MOSFET operation.2.Analyze basic FET amplifiers using the load-line technique.3.Analyze bias circuits. ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.4.Use small-signal equivalent circuitsto analyze FET amplifiers.5.Compute the performanceparameters of several FET amplifier configurations.6.Select a FET amplifier configurationthat is appropriate for a given application.7.Understand the basic operation of ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.NMOSANDPMOSTRANSISTORS ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc. Operationinthe CutoffRegion iD = 0 for vGS ≤ VtoELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc. Operationinthe TriodeRegion [ iD = K 2( vGS − vto ) v DS − v 2 DS ] W KP K = L 2ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc. Operationinthe SaturationRegion iD = K ( vGS − vto ) 2 iD = Kv 2 DSELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc. MOSFETSummaryELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.LOADLINEANALYSISOFA SIMPLENMOSAMPLIFIER v DD = RD iD ( t ) + v DS ( t )ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.ELECTRICALENGINEERING:PRINCIPLESANDAPPLICATIONS,ThirdEdition,byAllanR.Hambley,©2005PearsonEducation,Inc.