Effect of the ceria dopant on the structural and dielectric properties of ZnO semiconductors
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ZnO doped with different concentrations (2, 4, 6, 8 and 10%) of ceria was synthesized by the conventional solidestate reaction method. X-ray diffraction spectra confirm that all the samples have a hexagonal structure. The structural properties of the samples were studied from X-ray diffraction data.
Nội dung trích xuất từ tài liệu:
Effect of the ceria dopant on the structural and dielectric properties of ZnO semiconductors
Nội dung trích xuất từ tài liệu:
Effect of the ceria dopant on the structural and dielectric properties of ZnO semiconductors
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Advanced materials and devices Solid state reaction X-ray diffraction Structural properties Dielectric constant AC conductivityGợi ý tài liệu liên quan:
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