Highly efficient two-step nitrogen doping of graphene oxide-based materials in oxygen presence atmosphere for high-performance transistors and electrochemical applications
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Nitrogen content in graphene influences application performance. Although many studies have been conducted on single-process nitrogen (N)-doping, dopant content is still quite low. First, graphene oxide (GO) was hydrothermally nitrogen-doped. This nitrogen-doped reduced graphene oxide (NrGO) was then subjected to secondary plasma treatment. Two nitrogen(N)-doping mechanisms were observed depending on graphene's oxygen functionalized.
Nội dung trích xuất từ tài liệu:
Highly efficient two-step nitrogen doping of graphene oxide-based materials in oxygen presence atmosphere for high-performance transistors and electrochemical applications
Nội dung trích xuất từ tài liệu:
Highly efficient two-step nitrogen doping of graphene oxide-based materials in oxygen presence atmosphere for high-performance transistors and electrochemical applications
Tìm kiếm theo từ khóa liên quan:
Advanced materials and devices Two-step nitrogen-doping Nitrogen-doped graphene Oxygen contamination Graphene oxideTài liệu liên quan:
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