Modeling of parallel power MOSFETs in steady-state
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In this paper, an equivalent circuit model of parallel power MOSFETs describing the dynamic current-sharing behaviors from the turn-off state to the conducting steady state has been studied. The equivalent circuit model represents the relationship between each power MOSFET’s gate voltage with respect to the sharing current. The performance of the equivalent circuit model is validated through a comparison of the sharing current with respect to the gate voltage curve obtained from the proposed model and that of the experiment.
Nội dung trích xuất từ tài liệu:
Modeling of parallel power MOSFETs in steady-state
Nội dung trích xuất từ tài liệu:
Modeling of parallel power MOSFETs in steady-state
Tìm kiếm theo từ khóa liên quan:
International Symposium on Advanced Engineering Modeling of parallel power MOSFETs Parallel MOSFETs Power MOSFETs Silicon carbide semiconductors Semiconductor devices Electronic componentGợi ý tài liệu liên quan:
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