Molecular dynamic simulation of zigzag silicon carbide nanoribbon
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The heating process of zigzag silicon carbide nanoribbon (SiCNR) is studied via molecular dynamics (MD) simulation. The initial model contained 10000 atoms is heating from 50 K to 5000 K to study the structural evolution of zigzag SiCNR.
Nội dung trích xuất từ tài liệu:
Molecular dynamic simulation of zigzag silicon carbide nanoribbon
Nội dung trích xuất từ tài liệu:
Molecular dynamic simulation of zigzag silicon carbide nanoribbon
Tìm kiếm theo từ khóa liên quan:
Communications in Physics Zigzag SiCNR Melting range Structural evolution Melting point Molecular dynamic simulationGợi ý tài liệu liên quan:
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