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Structural, surface morphological, optical and electrical properties of InxSey thin films, an absorber layer for photovoltaic cells fabricated by M-CBD method using different variables

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Mixed-phased Inx Sey thin film containing InSe, In2 Se3 and In6 Se7 phases was prepared by M-CBD method and characterized by X-ray diffraction, AFM, optical spectroscopy and J-V measurements. Structural, optical and electrical conductance properties were modified by annealing the films at different temperatures. Optical and morphological properties were also investigated dependently on temperature and concentration of cationic precursor solution. It has been observed with annealing that, the compositions of the phases changed, particle sizes increased, energy band gaps decreased and electrical conductivity increased.
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Structural, surface morphological, optical and electrical properties of InxSey thin films, an absorber layer for photovoltaic cells fabricated by M-CBD method using different variables

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