Báo cáo sinh học: Compound semiconductor nanotubes materials grown and fabricated

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Compound semiconductor nanotubes materials grown and fabricated
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Báo cáo sinh học: " Compound semiconductor nanotubes materials grown and fabricated"Nanoscale Research Letters This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text (HTML) versions will be made available soon. Compound semiconductor nanotubes materials grown and fabricated Nanoscale Research Letters 2011, 6:627 doi:10.1186/1556-276X-6-627 Likun Ai (likunai@mail.sim.ac.cn) Anhuai Xu (xah@mail.sim.ac.cn) Teng Teng (tteng@mail.sim.ac.cn) Jiebin Niu (niujiebin@ime.ac.cn) Hao Sun (sh@mail.sim.ac.cn) Meng Qi (mqi@mail.sim.ac.cn) ISSN 1556-276X Article type Original paper Submission date 9 September 2011 Acceptance date 12 December 2011 Publication date 12 December 2011 Article URL http://www.nanoscalereslett.com/content/6/1/627 This peer-reviewed article was published immediately upon acceptance. It can be downloaded, printed and distributed freely for any purposes (see copyright notice below). Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http://www.nanoscalereslett.com/authors/instructions/ For information about other SpringerOpen publications go to http://www.springeropen.com © 2011 Ai et al. ; licensee Springer.This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.Compound semiconductor nanotube materials grown and fabricatedLikun Ai*1, Anhuai Xu1, Teng Teng1, Jiebin Niu2, Hao Sun1, and Ming Qi11 Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, Peoples Republic of China2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, Peoples Republic of China*Corresponding author: likunai@mail.sim.ac.cnEmail addresses:LA: likunai@mail.sim.ac.cnAX: xah@mail.sim.ac.cnTT: tteng@mail.sim.ac.cnJN: niujiebin@ime.ac.cnHS: sh@mail.sim.ac.cnMQ: mqi@mail.sim.ac.cnAbstractA new GaAs/InGaAs/InGaP compound semiconductor nanotube material structurewas designed and fabricated in this work. A thin, InGaAs-strained material layer wasdesigned in the nanotube structure, which can directionally roll up a strainedheterostructure through a normal wet etching process. The compound semiconductornanotube structure was grown by gas-source molecular beam epitaxy. A goodcrystalline quality of InGaP, InGaAs, and GaAs materials was obtained throughoptimizing the growth condition. The fabricated GaAs/InGaAs/InGaP semiconductornanotubes, with a diameter of 300 to 350 nm and a length of 1.8 to 2.0 µm, wereachieved through normal device fabrication.Keywords: compound semiconductor nanotubes; gas-source molecular beam epitaxy;GaAs/InGaAs/InGaP.Introduction Compound semiconductor nanotubes are a new field that has only caught limitedattention. Recently, compound semiconductor nanotubes have been applied inimproving existing biological and medical devices and in developing novel devicesfor gene and drug delivery [1-5]. Traditional technologies fail to produce microtubeswith diameters smaller than 10 mm [6]. Previously, a new fabrication method forprecise, single-crystal semiconductor micro- and nanotubes was proposed and realized[7, 8]. The approach is based on self-rolling of a thin, strained epitaxial heterofilmduring its detachment from the substrate in a chemically treated system ‘epitaxialheterofilm/sacrificial layer/substrate.’ In this technology, the tube diameter can beprecisely controlled. This allows feasible large-area assembly and integration with theexisting semiconductor technology while maintaining the control of nanotube size andheterojunction formation in the tube wall. In this work, GaAs/InGaAs/InGaP compound semiconductor nanotube structurematerials w ...