Báo cáo sinh học: Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
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Báo cáo sinh học: "Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors"Nanoscale Research Letters This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text (HTML) versions will be made available soon.Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors Nanoscale Research Letters 2011, 6:635 doi:10.1186/1556-276X-6-635 Jianxin Chen (jianxinchen@mail.sitp.ac.cn) Qingqing Xu (xuqq@mail.sitp.ac.cn) Yi Zhou (zhouyi_1986@hotmail.com) Jupeng Jing (jinjupeng@gmail.com) Chun Lin (chun_lin@mail.sitp.ac.cn) Li He (lihe@mail.sitp.ac.cn) ISSN 1556-276X Article type Nano Express Submission date 8 September 2011 Acceptance date 22 December 2011 Publication date 22 December 2011 Article URL http://www.nanoscalereslett.com/content/6/1/635 This peer-reviewed article was published immediately upon acceptance. It can be downloaded, printed and distributed freely for any purposes (see copyright notice below). Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http://www.nanoscalereslett.com/authors/instructions/ For information about other SpringerOpen publications go to http://www.springeropen.com © 2011 Chen et al. ; licensee Springer.This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.Growth and fabrication of InAs/GaSb type II superlattice mid-wavelengthinfrared photodetectorsJianxin Chen*1, Qingqing Xu1, Yi Zhou1, Jupeng Jing1, Chun Lin1, and Li He11 Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China*Corresponding author: Jianxinchen@mail.sitp.ac.cnEmail addresses:JC: Jianxinchen@mail.sitp.ac.cnQX: qqx@mail.sitp.ac.cnYZ: zhouyi_1986@hotmail.comJJ: jinjupeng@gmail.comCL: chun_lin@mail.sitp.ac.cnLH: lihe@mail.sitp.ac.cn 1AbstractWe report our recent work on the growth and fabrication of InAs/GaSb type II superlatticephotodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb ineach period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10−4.The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periodsof superlattice show a 50% cutoff wavelength of 4.3 µm. The current responsivity wasmeasured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 1011cmHz½/W and the quantum efficiency of 41% at 3.6 µm were obtained.Keywords: InAs/GaSb; type II superlattice; photodiodes; infrared.PACS: 85.60.-q; 85.60.Gz; 85.35.-Be.Introduction HgCdTe [MCT] photodetectors which offer excellent quantum efficiency are thedominating infrared technology, and very large MCT sensor arrays are available. Thedrawbacks of MCT come from its technology difficulty. MCT has weak mechanical strengthdue to the weak ionic bonds and low uniformity due to the high Hg vapor pressure. Commonsubstrates for MCT epitaxial growth are lattice-matched CdZnTe or readily available Si or Gecapped with a few-micron-thick buffer layers, yet no substrates are known to date which cansatisfy all necessities for being low cost, lattice-matched, and chemically, mechanically, andoptically well suited. Thus, the fabrication of large-format MCT arrays with homogeneousperformances becomes more and more challenging, especially with an increasing cutoffwavelength. Alternative approaches based on quantum, mechanically tailored semiconductorheterostructures have been developed including quantum well infrared photodetectors,quantu ...