Báo cáo sinh học: Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth

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Báo cáo sinh học: "Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth "Nanoscale Research Letters This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text (HTML) versions will be made available soon.Structural evolution of GeMn/Ge superlattices grown by molecular beam epitaxy under different growth conditions Nanoscale Research Letters 2011, 6:624 doi:10.1186/1556-276X-6-624 Ya Wang (ya.wang@uq.edu.au) Zhiming Liao (z.liao@uq.edu.au) Hongyi Xu (h.xu5@uq.edu.au) Faxian Xiu (xiufaxian@gmail.com) Xufeng Kou (kxf2323@gmail.com) Yong Wang (uqywang@gmail.com) Kang L Wang (wang@ee.ucla.edu) John Drennan (j.drennan@uq.edu.au) Jin Zou (j.zou@uq.edu.au) ISSN 1556-276X Article type Nano Express Submission date 19 September 2011 Acceptance date 12 December 2011 Publication date 12 December 2011 Article URL http://www.nanoscalereslett.com/content/6/1/624 This peer-reviewed article was published immediately upon acceptance. It can be downloaded, printed and distributed freely for any purposes (see copyright notice below). Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http://www.nanoscalereslett.com/authors/instructions/ For information about other SpringerOpen publications go to http://www.springeropen.com © 2011 Wang et al. ; licensee Springer.This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.Structural evolution of GeMn/Ge superlattices grown by molecular beamepitaxy under different growth conditionsYa Wang1, Zhiming Liao1, Hongyi Xu1, Faxian Xiu2, Xufeng Kou4, Yong Wang*1,3, Kang LWang4, John Drennan5, and Jin Zou*1,51 Division of Materials, The University of Queensland, Brisbane, QLD 4072, Australia2 Department of Electrical and Computer Engineering, Iowa State University, Ames, IA, 50011, USA3 Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China4 Department of Electrical Engineering, University of California at Los Angeles, CA, 90095, USA5 Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072, Australia*Corresponding authors: y.wang4@uq.edu.au; j.zou@uq.edu.auEmail addresses:YW: ya.wang@uq.edu.auZL: z.liao@uq.edu.auHX: h.xu5@uq.edu.auFX: faxian@iastate.eduXK: kxf2323@gmail.comYW: y.wang4@uq.edu.auKLW: wang@ee.ucla.eduJD: j.drennan@uq.edu.auJZ: j.zou@uq.edu.auAbstractGeMn/Ge epitaxial ‘superlattices’ grown by molecular beam epitaxy with different growthconditions have been systematically investigated by transmission electron microscopy. It isrevealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates atlow temperature (approximately 70°C) due to the matched lattice constants of Ge (5.656 Å)and GaAs (5.653 Å), while a periodic Ge/GeMn superlattice grown on Si showed disorderedGeMn nanodots with a large amount of stacking faults, which can be explained by the factthat Ge and Si have a large lattice mismatch. Moreover, by varying growth conditions, theGeMn/Ge superlattices can be manipulated from having disordered GeMn nanodots toordered coherent nanodots and then to ordered nanocolumns.Keywords: ferromagnetic semiconductor; transmission electron microscopy; magneticprecipitation; molecular beam epitaxy.PACS: 75.50.Pp; 61.72.-y; 66.30.Pa; 68.37.L. 1IntroductionSince their discovery in the early 2000s [1, 2], Mn-doped Ge-diluted magneticsemiconductors [DMS] have been extensively investigated due to their good compatibilitywit ...