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Báo cáo sinh học: "This peer-reviewed article was published"Nanoscale Research Letters This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text (HTML) versions will be made available soon. Cathodoluminescence spectra of gallium nitride nanorods Nanoscale Research Letters 2011, 6:631 doi:10.1186/1556-276X-6-631 Chia-Chang Tsai (ccjohntsai@gmail.com) Guan-Hua Li (sephiros1225@hotmail.com) Yuan-Ting Lin (yuanting.lin@gmail.com) Ching-Wen Chang (changchingwen0921262805@gmail.com) Paritosh Wadekar (paritosh.wadekar@gmail.com) Quark Yung-Sung Chen (qchen@mail.nsysu.edu.tw) Lorenzo Rigutti (lorenzo.rigutti@u-psud.fr) Maria Tchernycheva (maria.tchernycheva@u-psud.fr) Francois Henri Julien (francois.julien@u-psud.fr) Li-Wei Tu (lwtu@faculty.nsysu.edu.tw) ISSN 1556-276X Article type Nano Express Submission date 13 September 2011 Acceptance date 14 December 2011 Publication date 14 December 2011 Article URL http://www.nanoscalereslett.com/content/6/1/631 This peer-reviewed article was published immediately upon acceptance. It can be downloaded, printed and distributed freely for any purposes (see copyright notice below). Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http://www.nanoscalereslett.com/authors/instructions/ For information about other SpringerOpen publications go to http://www.springeropen.com © 2011 Tsai et al. ; licensee Springer.This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.Cathodoluminescence spectra of gallium nitride nanorodsChia-Chang Tsai1, Guan-Hua Li1, Yuan-Ting Lin1, Ching-Wen Chang1, ParitoshWadekar1, Quark Yung-Sung Chen1, Lorenzo Rigutti2, Maria Tchernycheva2,François Henri Julien2, and Li-Wei Tu*11 Department of Physics and Center for Nanoscience and Nanotechnology, NationalSun Yat-Sen University, Kaohsiung, Taiwan, 80424, Republic of China2Institut dElectronique Fondamentale, UMR 8622 CNRS, University Paris Sud XI,Orsay Cedex, 91405, France*Corresponding author: lwtu@faculty.nsysu.edu.twEmail addresses:CCT: ccjohntsai@gmail.comGHL: sephiros1225@hotmail.comYTL: yuanting.lin@gmail.comCWC: changchingwen0921262805@gmail.comPW: paritosh.wadekar@gmail.comQYSC: qchen@mail.nsysu.edu.twLR: lorenzo.rigutti@u-psud.frMT: maria.tchernycheva@u-psud.frFHJ: francois.julien@u-psud.frLWT: lwtu@faculty.nsysu.edu.twAbstractGallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C viaplasma-assisted molecular beam epitaxy were studied by field-emission electronmicroscopy and cathodoluminescence [CL]. The surface topography and opticalproperties of the GaN nanorod cluster and single GaN nanorod were measured anddiscussed. The defect-related CL spectra of GaN nanorods and their dependence ontemperature were investigated. The CL spectra along the length of the individual GaNnanorod were also studied. The results reveal that the 3.2-eV peak comes from thestructural defect at the interface between the GaN nanorod and Si substrate. Thesurface state emission of the single GaN nanorod is stronger as the diameter of theGaN nanorod becomes smaller due to an increased surface-to-volume ratio.Keywords: gallium nitride; nanorod; cathodoluminescence; scanning electronmicroscopy.IntroductionRecently, the applications of semiconductor materials in optoelectronic devices growrapidly. Among them, due to the high thermal conductivity, wide direct bandgap, andchemical stability, III-V family nitride-based semiconductors, including aluminumnitride [AlN], gallium nitride [GaN], and indium nitride [InN], and their alloys haveattracted lots of studies in the applications on light-emitting diodes and laser diodes.The bandgaps for Al ...